Product category: MOSFET
Technology: Si
Installation style: SMD/SMT
Package / Box: TO-252-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 55 V
Id-continuous drain current: 36 A
Rds On-Drain-source on-resistance: 40 mOhms
Vgs-gate-source voltage:-16 V, + 16 V
Vgs th- gate-source threshold voltage: 1.8 V
Qg-gate charge: 32 nC
Minimum operating temperature:-55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 69 W
Channel mode: Enhancement
Package: Cut Tape
Package: MouseReel
Package: Reel
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Fall time: 15 ns
Product type: MOSFET
Rise time: 84 ns
Factory Packing Quantity: 2000
Subcategory: MOSFETs
Typical turn-off delay time: 26 ns
Typical turn-on delay time: 11 ns
Unit weight: 4g

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Shenzhen haoyuanqiang electronics co., ltd